Kolkata - Bose Institute, Kolkata, has announced a scientific seminar titled "Interfacial Bond Bendj g and Deep Level Control in Transition-Metal-Doped Silicon". The seminar will be delivered by Ms. Shruti De  from the university at Albany, SUNY and is scheduled for January 16, 2026 at 3:00 pm". 

The talk will explore the interaction between surface band bending and deep-level electronic states in metal-doped silicon, highlighting advanced experimental techniques and the implications for semi-conductor and photonic technologies. The seminar will take place at Room 204 (second floor), Unified Academic Campus (UAC), Bose Institute 

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